Conference Paper,
Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development
ISBN ,
Contributors
Lin, Xi-Wei
0000-0003-0098-0638
(Corresponding author)
[1]
Gunst, Tue
0000-0002-3000-5940
[4]
Affiliations
- [1] Synopsys (United States) [NORA names: United States; America, North; OECD];
- [2] Synopsys Northen Europe Ltd, Glasgow, UK [NORA names: United Kingdom; Europe, Non-EU; OECD];
- [3] Synopsys Taiwan, Hsinchu, Taiwan R.O.C. [NORA names: Taiwan; Asia, East];
- [4] Synopsys Denmark, Copenhagen, Denmark [NORA names: Denmark; Europe, EU; Nordic; OECD];
- [5] Synopsys (Switzerland) [NORA names: Switzerland; Europe, Non-EU; OECD]
Abstract
Modeling and simulation is increasingly critical to memory technology exploration and development, as relentless scaling demands innovation, pushes the limits of physics, and increases the risk and cost of making architectural choices. Examples are given to demonstrate the value of multiscale, multi-physics modeling of complex problems, including a) row hammer and 4F2 floating body effects in DRAM; b) RTN and program noise in 3D NAND; c) 3D unit process, integration, and wafer warpage; and d) Vth engineering at the atomic level.
Keywords
DRAM,
Multiscale,
NAND,
RTN,
architectural choices,
atomic level,
body effect,
choice,
complex problems,
cost,
demand innovation,
development,
effect,
engineering,
exploration,
flash,
floating body effect,
innovation,
integration,
levels,
limitations,
limits of physics,
memory,
model,
modeling of complex problems,
multi-physics,
multi-physics model,
noise,
physics,
problem,
process,
program,
programming noise,
risk,
scale,
simulation,
technology exploration,
wafer,
wafer warpage,
warpage
