Article, 2024

Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires

ACS Applied Electronic Materials, ISSN 2637-6113, Volume 6, 6, Pages 4643-4652, 10.1021/acsaelm.4c00636

Contributors

Xue, Jun-Jun [1] Wang, Saisai [2] Tong, Jiaming [1] Yang, Guofeng 0000-0002-4409-9685 [3] Parkhomenko, Irina N 0000-0003-0982-3938 [4] Komarov, Фадей Фадеевич 0000-0001-8292-8942 [4] Liu, Yu [5] Cai, Qing 0000-0003-4930-2256 (Corresponding author) [2] Wang, Jin 0000-0002-9881-7208 (Corresponding author) [1] Zhi, Ting (Corresponding author) [1]

Affiliations

  1. [1] Nanjing University of Posts and Telecommunications
    2. [NORA names: China; Asia, East];
  2. [2] Nanjing University
    3. [NORA names: China; Asia, East];
  3. [3] Jiangnan University
    4. [NORA names: China; Asia, East];
  4. [4] Belarusian State University
    5. [NORA names: Belarus; Europe, Non-EU];
  5. [5] University of Copenhagen
    6. [NORA names: KU University of Copenhagen; University; Denmark; Europe, EU; Nordic; OECD]

Abstract

Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.

Keywords

AlGaN/AlN/GaN, AlN, PEC, UV PD, UV detection, band engineering, bias, carrier drift, carrier transport, carriers, communication, detection, detection performance, development, devices, drift, effect, electrolyte, energy-efficient devices, engineering, environment, future, heterojunction, heterojunction nanowires, high efficiency, high response, illumination, independent operation, insertion, modification strategies, nanowires, nitride, nitride semiconductors, operation, optical communication, performance, photodetection, photodetection system, photodetectors, photoresponse, process, recombination, response, response speed, results, semiconductor, solar-blind UV detection, solar-blind photodetectors, speed, strategies, study, surface, surface modification strategy, system, transport, ultraviolet photodetectors, underwater, underwater optical communication

Funders

  • Jiangsu Provincial Department of Education
  • National Natural Science Foundation of China
  • Ministry of Science and Technology of the People's Republic of China

Data Provider: Digital Science

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