open access publication

Article, 2024

Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices

Nano Letters, ISSN 1530-6984, 1530-6992, Volume 24, 22, Pages 6553-6559, 10.1021/acs.nanolett.4c01038

Contributors

Olsteins, Dags 0000-0002-2946-7531 [1] Nagda, Gunjan [2] Carrad, Damon James 0000-0003-0372-8593 [1] Beznasyuk, Daria V 0000-0002-8279-1875 [1] Petersen, Christian E. N. [1] Martí-Sánchez, Sara 0000-0003-4283-1489 [3] Arbiol, Jordi 0000-0002-0695-1726 [3] [4] Jespersen, Thomas Sand 0000-0001-6575-360X (Corresponding author) [1] [2]

Affiliations

  1. [1] Technical University of Denmark
    2. [NORA names: DTU Technical University of Denmark; University; Denmark; Europe, EU; Nordic; OECD];
  2. [2] University of Copenhagen
    3. [NORA names: KU University of Copenhagen; University; Denmark; Europe, EU; Nordic; OECD];
  3. [3] Institut Català de Nanociència i Nanotecnologia
    4. [NORA names: Spain; Europe, EU; OECD];
  4. [4] Institució Catalana de Recerca i Estudis Avançats
    5. [NORA names: Spain; Europe, EU; OECD]

Abstract

New approaches such as selective area growth (SAG), where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.

Keywords

InAs nanowires, area growth, array, assessment, atomic force microscopy studies, circuit, components, contribution, correlation, correlation measurements, crystal, crystal growth, cycle, device reproducibility, devices, distribution, distributions of structural parameters, effect transistors, electrical properties, electron microscopy, field-effect transistors, growth, impurity scattering, individual components, integration, measurements, methodology, metrics, microscopy, microscopy studies, multiplexing circuit, nanoelectronics, nanomaterials, nanowire field-effect transistors, nanowires, optimization, optimization of reproducibility, parameters, potential, properties, quantum, quantum nanoelectronics, reproducibility, results, scattering, selective area growth, semiconductor nanomaterials, statistical distribution, statistical metrics, statistical reproducibility, statistically, structural parameters, study, thermal cycling, transistors, transmission, transmission electron microscopy

Funders

  • Spanish National Research Council
  • European Research Council
  • Government of Catalonia
  • Ministry of Economy, Industry and Competitiveness
  • European Commission
  • The Velux Foundations

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