Article,
New insights into lamellar and twinning transformations in TiAl/Nb composites with core-shell structure during high temperature annealing
Affiliations
- [1] Harbin Institute of Technology [NORA names: China; Asia, East];
- [2] Technical University of Denmark [NORA names: DTU Technical University of Denmark; University; Denmark; Europe, EU; Nordic; OECD];
- [3] UNSW Sydney [NORA names: Australia; Oceania; OECD]
Abstract
Lamellar and twinning transformations play a crucial role in stabilizing the ordered phases in TiAl based composites for property improvement. In this work, we have systematically investigated the lamellar and twinning transformations in TiAl/Nb composites with core-shell structure and proposed novel insights on γ → α2 and γ → γT processes from an atomistic perspective. The results show that high temperature annealing facilitates the formation of lamellar microstructure including γ + α2 and γT twin lamellae in the vicinity of core/shell interface, due to rapid diffusion of principal atoms followed by atomic shuffling. Specifically, plenty of lenticular γT can nucleate in B2 regime by accidental misalignment of atoms on a 110 B 2 plane adhering to Kurdjumov-Sachs relationship, and then grow even into α2 lath driven by the release of internal stress via Shockley partial slips on the 111 γ plane. The formation of γT mediated by 9R involves γ → 9R and γ ← 9R → γT transformations. Among them, a full period of atomic stacking …ABC|BCA|CAB… (LPSO) can be achieved through three Shockley partials being sequentially activated on the C, A and B atomic layers in the stacking of …ABC|ABC|ABC… (L10) with the total shift of 3δA. Then 9R will change synchronously to γ and γT once the migrating Shockley partials react with Frank partials to yield a full dislocation, i.e., δA + Dδ→DA and δA + δC + δD→BD, which can also be considered as detwinning and twinning behaviors, respectively. Additionally, the transition of bulk γ to α2 or γT lamellae is closely associated with the stacking faults, i.e. whether the activated atomic layer is located at the boundary or periphery of the updated stacking fault region.