open access publication

Article, 2023

Synthesis and Electronic Structure of Mid-Infrared Absorbing Cu3SbSe4 and Cu x SbSe4 Nanocrystals

Chemistry of Materials, ISSN 1520-5002, 0897-4756, Volume 35, 16, Pages 6323-6331, 10.1021/acs.chemmater.3c00911

Contributors

Moser, Annina [1] Yarema, Olesya [1] GarcĂ­a, Gregorio 0000-0003-3200-3153 [2] Luisier, Mathieu Maurice 0000-0002-2212-7972 [1] Longo, Filippo 0000-0002-2345-9362 [3] Billeter, Emanuel 0000-0002-3230-053X [4] Borgschulte, Andreas 0000-0001-6250-4667 [3] [5] Yarema, Maksym 0000-0002-2006-2466 [1] Wood, Vanessa C 0000-0001-6435-0227 (Corresponding author) [1]

Affiliations

  1. [1] ETH Zurich
  2. [NORA names: Switzerland; Europe, Non-EU; OECD];
  3. [2] Technical University of Madrid
  4. [NORA names: Spain; Europe, EU; OECD];
  5. [3] Swiss Federal Laboratories for Materials Science and Technology
  6. [NORA names: Switzerland; Europe, Non-EU; OECD];
  7. [4] Technical University of Denmark
  8. [NORA names: DTU Technical University of Denmark; University; Denmark; Europe, EU; Nordic; OECD];
  9. [5] University of Zurich
  10. [NORA names: Switzerland; Europe, Non-EU; OECD]

Abstract

Aliovalent I-V-VI semiconductor nanocrystals are promising candidates for thermoelectric and optoelectronic applications. Famatinite Cu3SbSe4 stands out due to its high absorption coefficient and narrow band gap in the mid-infrared spectral range. This paper combines experiment and theory to investigate the synthesis and electronic structure of colloidal CuxSbSe4 nanocrystals. We achieve predictive composition control of size-uniform CuxSbSe4 (x = 1.9-3.4) nanocrystals. Density functional theory (DFT)-parametrized tight-binding simulations on nanocrystals show that the more the Cu-vacancies, the wider the band gap of CuxSbSe4 nanocrystals, a trend which we also confirm experimentally via FTIR spectroscopy. We show that SbCu antisite defects can create mid-gap states, which may give rise to sub-bandgap absorption. This work provides a detailed study of CuxSbSe4 nanocrystals and highlights the potential opportunities as well as challenges for their application in infrared devices.

Keywords

Cu-vacancies, Cu3SbSe4, FTIR, FTIR spectroscopy, absorption, antisite defects, applications, band, band gap, composition control, control, defects, density, devices, electron, electronic structure, experiments, famatinite, gap, infrared, infrared devices, mid-gap states, mid-infrared spectral range, nanocrystals, narrow band gap, opportunities, optoelectronic applications, potential opportunities, range, semiconductor nanocrystals, simulation, spectral range, spectroscopy, state, study, sub-bandgap absorption, synthesis, theory, tight-binding simulations

Funders

  • European Research Council
  • Ministry of Economy, Industry and Competitiveness
  • European Union
  • Swiss National Science Foundation
  • European Commission

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