open access publication

Article, 2023

Optically Active Telecom Defects in MoTe2 Fewlayers at Room Temperature

Nanomaterials, ISSN 2079-4991, Volume 13, 9, Page 1501, 10.3390/nano13091501

Contributors

Lei, Yuxin [1] Lin, Qiaoling 0000-0003-1633-0293 [2] Xiao, Sanshui 0000-0001-6529-5047 [2] Li, Juntao 0000-0003-1399-9792 [1] Fang, Han-Lin 0000-0001-9743-9295 (Corresponding author) [3]

Affiliations

  1. [1] Sun Yat-sen University
  2. [NORA names: China; Asia, East];
  3. [2] Technical University of Denmark
  4. [NORA names: DTU Technical University of Denmark; University; Denmark; Europe, EU; Nordic; OECD];
  5. [3] Chalmers University of Technology
  6. [NORA names: Sweden; Europe, EU; Nordic; OECD]

Abstract

The optical and electrical properties of semiconductors are strongly affected by defect states. The defects in molybdenum ditelluride (MoTe2) show the potential for quantum light emission at optical fiber communication bands. However, the observation of defect-related light emission is still limited to cryogenic temperatures. In this work, we demonstrate the deep defect states in MoTe2 fewlayers produced via a standard van der Waal material transfer method with a heating process, which enables light emission in the telecommunication O-band. The optical measurements show evidence of localized excitons and strong interaction among defects. Furthermore, the optical emission of defects depends on the thickness of the host materials. Our findings offer a new route for tailoring the optical properties of two-dimensional materials in optoelectronic applications.

Keywords

MoTe2, O-band, applications, band, communication band, cryogenic temperatures, deep defect states, defect states, defect-related light emission, defects, ditelluride, electrical properties, emission, emission of defects, evidence, excitons, findings, heat, heating process, host, host material, interaction, light emission, localized excitons, materials, measurements, method, molybdenum, molybdenum ditelluride, observations, optical emission, optical fiber communication band, optical measurements, optical properties, optical properties of two-dimensional materials, optics, optoelectronic applications, potential, process, properties, properties of two-dimensional materials, quantum light emission, room, room temperature, semiconductor, state, telecommunication O-band, telecommunications, temperature, thickness, transfer method, two-dimensional materials

Funders

  • National Natural Science Foundation of China
  • Danish National Research Foundation
  • Carl Tryggers stiftelse för vetenskaplig forskning

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