Article, 2023

Hierarchical modeling for TCAD simulation of short-channel 2D material-based FETs

In: Solid-State Electronics, ISSN 1879-2405, 0038-1101, Volume 200, Page 108533, 10.1016/j.sse.2022.108533

Contributors (8)

Silvestri, Luca (Corresponding author) [1] Palsgaard, Mattias L N [2] Rhyner, Reto [1] Frey, Martin S [1] Wellendorff, Jess (0000-0001-5799-1683) [2] Smidstrup, Søren (0000-0002-1766-9662) [2] Gull, Ronald [1] Sayed, Karim El [3]


  1. [1] Synopsys (Switzerland)
  2. [NORA names: Switzerland; Europe, Non-EU; OECD]
  3. [2] Synopsys Denmark ApS, Copenhagen, Denmark
  4. [3] Synopsys (United States)
  5. [NORA names: United States; America, North; OECD]


An integrated hierarchical modeling flow for fast analysis and prototyping of 2D material-based field-effect transistors (FETs) is presented. Advanced transport simulators using ab initio atomistic density functional theory (DFT) and continuum effective mass non-equilibrium Green’s Functions (NEGF) consistently provide TCAD tools with device material and component parameters and reference curves for physical model selection and calibration. We validate each step of the hierarchical flow, and we show that the simulations performed with the resulting TCAD setup accurately predict 2D-FETs device characteristics.


Green's function, TCAD setup, TCAD simulations, TCAD tools, analysis, calibration, characteristics, component parameters, curves, density functional theory, device characteristics, device materials, fast analysis, field-effect transistors, flow, function, functional theory, hierarchical flow, hierarchical modeling, materials, materials-based field-effect transistors, model selection, modeling, modeling flow, non-equilibrium Green's function, parameters, prototyping, reference curves, selection, setup, simulations, simulator, step, theory, tool, transistors, transport simulator