open access publication

Article, 2022

Impact of the gate geometry on adiabatic charge pumping in InAs double quantum dots

Nanoscale Advances, ISSN 2516-0230, Volume 4, 18, Pages 3816-3823, 10.1039/d2na00372d

Contributors

An, Sung Jin [1] Bae, Myung-Ho 0000-0002-6884-2859 [2] Lee, Myoung-Jae 0000-0003-2626-0460 [1] Song, Man Suk [1] Madsen, Morten Hannibal 0000-0001-8766-6638 [3] Nygård, Jesper 0000-0002-4639-5314 [3] Schönenberger, Christian [4] Baumgartner, Andreas 0000-0003-4681-4926 [4] Seo, Jungpil 0000-0002-0442-288X (Corresponding author) [1] Jung, Minkyung 0000-0003-1515-5913 (Corresponding author) [1]

Affiliations

  1. [1] Daegu Gyeongbuk Institute of Science and Technology
    2. [NORA names: South Korea; Asia, East; OECD];
  2. [2] Korea Research Institute of Standards and Science
    3. [NORA names: South Korea; Asia, East; OECD];
  3. [3] University of Copenhagen
    4. [NORA names: KU University of Copenhagen; University; Denmark; Europe, EU; Nordic; OECD];
  4. [4] University of Basel
    5. [NORA names: Switzerland; Europe, Non-EU; OECD]

Abstract

We compare the adiabatic quantized charge pumping performed in two types of InAs nanowire double quantum dots (DQDs), either with tunnel barriers defined by closely spaced narrow bottom gates, or by well-separated side gates. In the device with an array of bottom gates of 100 nm pitch and 10 μm lengths, the pump current is quantized only up to frequencies of a few MHz due to the strong capacitive coupling between the bottom gates. In contrast, in devices with well-separated side gates with reduced mutual gate capacitances, we find well-defined pump currents up to 30 MHz. Our experiments demonstrate that high frequency quantized charge pumping requires careful optimization of the device geometry, including the typically neglected gate feed lines.

Keywords

InAs, InAs double quantum dots, InAs nanowire double quantum dot, adiabatic charge pumping, array, barriers, bottom gate, capacitance, capacitive coupling, charge pump, coupling, current, device geometry, devices, dots, double quantum dot, experiments, feed line, feeding, frequency, gate, gate capacitance, gate geometry, geometry, impact, length, lines, nanowire double quantum dot, optimization, pitch, pump, pump current, quantized charge pumping, quantum dots, side, side gates, strong capacitive coupling, tunnel, tunnel barrier

Funders

  • European Research Council
  • Korea Research Institute of Standards and Science
  • National Research Foundation of Korea
  • Ministry of Science and ICT
  • Swiss National Science Foundation

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