Patents - Global Data - Dimensions
AREA-SELECTIVE ATOMIC LAYER DEPOSITION METHOD
Applicants:
- Atlant 3d Nanosystems
Abstract
The disclosure relates to an atomic layer deposition method, comprising depositing a first layer of a first material at a selective first area of a substrate, and depositing a second layer of a second material at a selective second area of the substrate different from the first area. The first layer is deposited as a first line having a minimum first linewidth, and the second layer is deposited as a second line having a minimum second linewidth. The second layer is deposited partly on the first layer such that the first layer and the second layer partly overlap by a predetermined amount, or the first layer and the second layer are laterally spaced apart.
Patent Family Records (3)
DIRECT ATOMIC LAYER DEPOSITION AND/OR ETCHING METHOD
ATLANT 3D NANOSYSTEMS KUNDRATA IVAN, WIESNER PHILIPP, PLAKHOTNYUK MAKSYM, (...more)
2023, WO-2023079030-A3
DIRECT ATOMIC LAYER DEPOSITION AND/OR ETCHING METHOD
ATLANT 3D NANOSYSTEMS KUNDRATA IVAN, WIESNER PHILIPP, PLAKHOTNYUK MAKSYM, (...more)
2023, WO-2023079030-A2
AREA-SELECTIVE ATOMIC LAYER DEPOSITION METHOD
Atlant 3d Nanosystems KUNDRATA IVAN, WIESNER PHILIPP, PLAKHOTNYUK MAKSYM, (...more)
2023, EP-4177371-A1
