METHOD OF PATTERNING A LAYER OF SUPERCONDUCTOR MATERIAL

Patent Number: US-20230354720-A1

Publication Year: 2023

Application Year: 2020

Priority Year: 2020

Jurisdictions: US

Status: Pending

Inventors:

DRACHMANN ASBJØRN CENNET CLIFF PETERSSON KARL

Applicants:

  1. University of Copenhagen
  2. [NORA names: KU University of Copenhagen; University; Denmark; Europe, EU; Nordic; OECD]
  3. Microsoft (United States)
  4. [NORA names: United States; America, North; OECD]

Abstract

A method of patterning a layer of superconductor material comprises: forming a mask over the layer of superconductor material, the mask having at least one opening; depositing a layer of anodizable metal in the at least one opening, over a portion of the layer of superconductor material; removing the mask; and performing anodic oxidation, whereby the layer of anodizable metal protects the portion of the layer of the superconductor material from the anodic oxidation. The superconductor material is aluminium. The method allows for patterning of the superconductor material without the use of a chemical etch. This may in turn allow for improvements in resolution, and/or may avoid damage to further components or interfaces between components which may be present during the patterning. Also provided are the use of a titanium layer to protect an aluminium layer from anodic oxidation, and a semiconductor-superconductor hybrid device obtainable by the method.

Patent Family Records (1)

METHOD OF PATTERNING A LAYER OF SUPERCONDUCTOR MATERIAL

Microsoft (United States), Microsoft Technology Licensing LLC DRACHMANN ASBJØRN CENNET CLIFF, PETERSSON KARL

2023, US-20230354720-A1

Data Provider: Digital Science